MSR2N2369AUB View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
MFG CO.
MSR2N2369AUB Datasheet PDF : 7 Pages
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MSR2N2369AUB / UBC
ESCC radiation assurance
Each product lot is tested according to the ESCC basic specification 22900, with a minimum of 21 samples per diffusion lot and
10 samples per wafer, one sample being kept as un-irradiated sample, all of them being fully compliant with the applicable
ESCC generic and/or detailed specification.
– Test of 10 pieces by wafer, 10 biased at least 80% of V(BR)CEO, 10 unbiased and 1 kept for
reference
– Irradiation at 0.1 rad (Si)/s
– Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 20 samples comply
with the post radiation electrical characteristics provided in Table 4 (post radiation electrical
characteristics for the 2N2369A)
– Delivery together with the parts of the radiation verification test (RVT) report of the particular
wafer used to manufacture the products. This RVT includes the value of each parameter at 30,
50, 70 and 100 krad (Si) and after 24 hour annealing at room temperature and after an additional
168 hour annealing at 100°C.
Radiation summary
Radiation test (Note 1)
Wafer test
Part
Dot set radte
Acceptance
Displacement damage
100 krad ESCC
each
10 biased + 10 unbiased
0.1 rad/s
MIL-STD-750 method 1019
Optional
1. Microsemi MSR products will exceed required testing of ESCC basic specification 22900
POST RADIATION- Table 4
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector to Base Cutoff Current
VCB = 40 V
VCB = 32 V
Emitter to Base Cutoff Current
VEB = 4.5 V
VEB = 4 V
Collector to Emitter Breakdown Voltage
IC = 10 mA
Forward-Current Transfer Ratio (2)
IC = 10 mA, VCE = 0.35 V
IC = 30 mA, VCE = 0.4 V
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 30 mA, IB = 3.0 mA
ICBO
IEBO
V(BR)CEO
15
20
µA
0.4
20
µA
0.50
V
[20]
120
[hFE]
[15]
120
[20]
120
[10]
120
VCE(sat)
0.23
V
0.29
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 30 mA, IB = 3.0 mA
VBE(sat)
0.70
0.98
V
1.04
1. This value is determined from ∆(1/hfe) using pre & post radiation values of hfe. [hfe] should not exceed the pre- radiation minimum hfe.
T4-LDS-0338-3, Rev. 1 (04/22/14)
©2014 Microsemi Corporation
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