IXFH20N50P3 View Datasheet(PDF) - IXYS CORPORATION

Part Name

Description

MFG CO.

IXFH20N50P3

Polar3™ HiperFET™ Power MOSFETs

IXYS CORPORATION 

Preliminary Technical Information

Polar3TM HiperFETTM

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

IXFA20N50P3

IXFP20N50P3

IXFQ20N50P3

IXFH20N50P3

TO-263 AA (IXFA)

VDSS =

ID25 =

RDS(on) 

500V

20A

300m

TO-220AB (IXFP)

Symbol

VDSS

VDGR

VGSS

VGSM

ID25

IDM

IA

EAS

dv/dt

PD

TJ

TJM

Tstg

TL

TSOLD

FC

Md

Weight

G

S

D (Tab)

Test Conditions

TJ = 25C to 150C

TJ = 25C to 150C, RGS = 1M

Continuous

Transient

Maximum Ratings

500

V

500

V

 30

V

 40

V

TC = 25C

TC = 25C, Pulse Width Limited by TJM

TC = 25C

TC = 25C

IS  IDM, VDD  VDSS, TJ  150°C

TC = 25C

20

40

10

300

35

380

-55 ... +150

150

-55 ... +150

A

A

A

mJ

V/ns

W

 C

 C

 C

Maximum Lead Temperature for Soldering

300

°C

Plastic Body for 10s

260

°C

Mounting Force

Mounting Torque

10..65/2.2..14.6

1.13 / 10

N/lb

Nm/lb.in

TO-263

TO-220

TO-3P

TO-247

2.5

g

3.0

g

5.5

g

6.0

g

Symbol

Test Conditions

(TJ = 25C Unless Otherwise Specified)

BVDSS

VGS = 0V, ID = 1mA

VGS(th)

VDS = VGS, ID = 1.5mA

IGSS

VGS = 30V, VDS = 0V

IDSS

VDS = VDSS, VGS = 0V

TJ = 125C

RDS(on)

VGS = 10V, ID = 0.5 • ID25, Note 1

Characteristic Values

Min. Typ. Max.

500

V

3.0

5.0 V

          100 nA

25 A

1.25 mA

300 m

GD S

TO-3P (IXFQ)

D (Tab)

G

D

S

TO-247 (IXFH)

D (Tab)

G

DS

D (Tab)

G = Gate

D = Drain

S = Source Tab = Drain

Features

 Fast Intrinsic Rectifier

 Avalanche Rated

 Low RDS(ON) and QG

 Low Package Inductance

Advantages

 High Power Density

 Easy to Mount

 Space Savings

Applications

 Switch-Mode and Resonant-Mode

Power Supplies

 DC-DC Converters

 Laser Drivers

 AC and DC Motor Drives

 Robotics and Servo Controls

© 2013 IXYS CORPORATION, All Rights Reserved

DS100414A(11/13)

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