2N5951 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

MFG CO.

2N5951

N-Channel RF Amplifier

Fairchild Semiconductor 

Electrical Characteristics* Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

Min. Max. Units

Off Characteristics

V(BR)GSS

IGSS

Gate-Source Breakdown Voltage

Gate Reverse Current

VGS(off)

VGS

Gate-Source Cut-off Voltage

Gate-Source Forward Voltage

IG = 1.0μA, VDS = 0

VGS = 15V, VDS = 0, T = 25°C

T = 100°C

VDS = 15V, ID = 100nA

VDS = 15V, ID = 700μA

-30

V

-1.0

-200

nA

-2

-5

V

-1.3 -4.5

V

On Characteristics

*IDSS

RDS(on)

Zero-Gate Voltage Drain Current *

Drain-Source On Resistance

VDS = 15V, VGS = 0

ID = 400μA, f = 1.0kHz

7

13

mA

250

Ω

Small Signal Characteristics

goss

Common- Source Output Conductance

gos

Output Conductance

gis

Input Conductance

Ciss

Input Capacitance

Crss

Reverse Transfer Capacitance

en

Equivalent Short-Circuit Input Noise Voltage

NF

Noise Figure

* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle = 2%

VDS = 15V, VGS = 0V, f = 1.0kHz

VDS = 15V, VGS = 0V, f = 100MHz

VDS = 15V, VGS = 0V, f = 100MHz

VDS = 15V, VGS = 0V, f = 1.0MHz

VDS = 15V, VGS = 0V, f = 1.0MHz

VDS = 15V, VGS = 0V, f = 1.0kHz

VDS = 15V, VGS = 0V,

RG = 1.0mΩ, f = 1.0kHz

RG = 1.0kΩ, f = 100MHz

75

μ/Ω

100

μ/Ω

250

μ/Ω

6

pF

2

pF

100

nV

2

dB

5

© 2007 Fairchild Semiconductor Corporation

2N5951 Rev. 1.0.0

2

www.fairchildsemi.com

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