SKW25N120 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
MFG CO.
SKW25N120
Infineon Technologies
SKW25N120 Datasheet PDF : 13 Pages
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SKW25N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tF
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=800V,IC=25A,
VGE=15/0V,
RG=22Ω,
Lσ1)=180nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=800V, IF=25A,
diF/dt=650A/µs
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
45
40
730
30
2.2
1.5
3.7
90
1.0
20
470
Unit
max.
60 ns
52
950
39
2.9 mJ
2.0
4.9
ns
µC
A
A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tF
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=150°C
VCC=800V,IC=25A,
VGE=15/0V,
RG=22Ω,
Lσ1)=180nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150°C
VR=800V, IF=25A,
diF/dt=750A/µs
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
50
36
820
42
3.8
2.9
6.7
280
4.3
32
130
Unit
max.
60 ns
43
990
50
4.6 mJ
3.8
8.4
ns
µC
A
A/µs
1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
Power Semiconductors
3
Rev. 2_1 Apr 06
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