TB1226EN View Datasheet(PDF) - Toshiba

Part Name

Description

MFG CO.

TB1226EN

TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC

Toshiba 

TB1226EN

ITEM

DESCRIPTION

NUMBER

OF BITS

VARIABLE RANGE

PRESET VALUE

MUTE MODE

OFF, RGB mute, Y mute,

transverse

2bit

OFF, RGB, Y, Transverse

01h RGB

WIDE V-BLK START

PH

Vertical pre-position selection

6bit

−64~−1H STEP 1H

3Fh −1H

BLK SW

Blanking ON / OFF

1bit

ON / OFF

00h ON

WIDE V-BLK STOP PH

Vertical post-position

selection

7bit

0~128H STEP 1H

00h 0H

NOISE DET LEVEL

Noise detection level

selection

2bit

0.15, 0.125, 0.1, 0.075

02h 0.1

WIDE P-MUTE START Video mute pre-position

PH

selection

6bit

−64~−1H STEP 1H

3Fh −1H

N COMB

1H addition selection

1bit

OFF / ADD

00h OFF

WIDE P-MUTE STOP

PH

Video mute post-position

selection

7bit

0~128H STEP 1H

00h 0H

S-field

SECAM color and Q

selection in weak electric

field

1bit

Weak electric field control ON /

OFF

00h

ON

SCD ATT

SECAM color difference

amplitude adjustment

1bit

0 / −1dB

00h 0dB

DEMO F0

SECAM deemphasis time

constant selection

1bit

85kHz / 100kHz

00h 85kHz

S GP

SECAM gate position

selection

1bit

Standard / 0.5µs delay

00h Standard

V-ID SW

SECAM V-ID ON / OFF

switch

1bit

OFF / ON

00h OFF

S KIL

SECAM KILLER sensitivity

selection

1bit

NORMAL / LOW

00h NORMAL

BELL F0

Bell f0 adjustment

2bit

−46~92kHz STEP 46kHz

01h 0kHz

16

2001-07-26

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