FQB8N60CTM View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
MFG CO.
FQB8N60CTM Datasheet PDF : 9 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1.
2.
VGS
ID =
=0V
250 μ
A
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
101
1 ms
10 ms
100 ms
DC
100
10-1
10-2
100
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 4 A
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs Temperature
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
100
D = 0.5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
1 0 -5
※ N o te s :
1 . Z θ JC(t) = 0.85 ℃ /W M a x.
2 . D uty F a c to r, D = t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
sin g le p u lse
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S qu a re W ave P u lse D u ra tion [se c]
1
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
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