FQB8N60CTM View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
MFG CO.
FQB8N60CTM Datasheet PDF : 9 Pages
| |||
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
3.5
3.0
V = 10V
GS
2.5
2.0
1.5
V = 20V
GS
1.0
※ Note : TJ = 25℃
0.5
0
5
10
15
20
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10-1
C
iss
C
oss
C
rss
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1.
2.
V25DS0μ=
40V
s Pulse
Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
V25G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 120V
V = 300V
8
DS
VDS = 480V
6
4
2
※ Note : ID = 8A
0
0
5
10
15
20
25
30
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
Share Link: 