IXFV18N60PS View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
IXFV18N60PS Datasheet PDF : 5 Pages
| |||
IXFH 18N60P
IXFV 18N60P IXFV 18N60PS
Symbol
gfs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, Note 1
9 16
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
2500
pF
280
pF
23
pF
V = 10 V, V = 0.5 V , I = I
GS
DS
DSS D D25
R
G
= 5 Ω (External)
21
ns
22
ns
62
ns
22
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
50
nC
15
nC
18
nC
(TO-247, PLUS220)
0.35 °C/W
0.21
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
I
V =0V
S
GS
18 A
ISM
Repetitive
54 A
V
I = I , V = 0 V, Note 1
SD
F S GS
1.5 V
trr
IS = 18 A, -di/dt = 100 A/μs
Q
V = 100 V, V = 0 V
RM
R
GS
F
RM
200 ns
0.8
μC
5
A
Note 1: Pulse test, t ≤ 300 μs, duty cycled ≤ 2 %
TO-247 (IXFH) Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A
2.2 2.54
1
A
2.2 2.6
2
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220 (IXFV) Outline
PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463
6,771,478 B2
Share Link: 