STF18N60M2 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STF18N60M2

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package

STMicroelectronics 

STF18N60M2

Electrical characteristics

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

ISDM (1)

Source-drain current (pulsed)

-

VSD (2)

Forward on voltage

ISD = 13 A, VGS = 0 V

-

trr

Reverse recovery time

ISD = 13 A, di/dt = 100 A/µs

-

Qrr

Reverse recovery charge

VDD = 60 V (see

-

Figure 15. Test circuit for

IRRM

Reverse recovery current

inductive load switching and

diode recovery times)

-

13

A

52

A

1.6

V

305

ns

3.3

µC

22

A

trr

Reverse recovery time

ISD = 13 A, di/dt = 100 A/µs

-

417

ns

Qrr

Reverse recovery charge

VDD = 60 V, Tj = 150 °C

-

4.6

µC

(see Figure 15. Test circuit for

IRRM

Reverse recovery current

inductive load switching and

-

22

A

diode recovery times)

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

DS9710 - Rev 4

page 4/12

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