STF18N60M2 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STF18N60M2

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package

STMicroelectronics 

STF18N60M2

Electrical ratings

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VGS

Gate-source voltage

ID (1)

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM (2)

Drain current (pulsed)

PTOT

Total power dissipation at TC = 25 °C

dv/dt (3)

Peak diode recovery voltage slope

dv/dt (4)

MOSFET dv/dt ruggedness

VISO

Insulation withstand voltage (RMS) from all three leads to external heat

sink (t = 1 s; TC = 25 °C)

Tstg

Storage temperature range

Tj

Operating junction temperature range

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 13 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V

4. VDS ≤ 480 V

Symbol

Rthj-case

Rthj-amb

Table 2. Thermal data

Parameter

Thermal resistance junction-case

Thermal resistance junction-ambient

Value

±25

13

8

52

25

15

50

2.5

-55 to 150

Value

5

62.5

Unit

V

A

A

A

W

V/ns

V/ns

kV

°C

Unit

°C/W

°C/W

Symbol

IAR

EAS

Table 3. Avalanche characteristics

Parameter

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

Single pulse avalanche energy (starting Tj=25 °C, ID= IAR, VDD=50 V)

Value

Unit

3

A

135

mJ

DS9710 - Rev 4

page 2/12

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