2SA830STP View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
MFG CO.
2SA830STP Datasheet PDF : 4 Pages
| |||
Transistors
2SB852K / 2SA830S
High-gain Amplifier Transistor (−32V, −0.3A)
2SB852K / 2SA830S
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SD1383K / 2SD1645S.
zCircuit diagram
C
B
RBE 4kΩ
E : Emitter
B : Base
C : Collector
E
zExternal dimensions (Unit : mm)
2SB852K
2.9
1.1
0.4
0.8
(3)
(1)Emitter
(2)Base
(3)Collector
2SA830S
(2)
(1)
0.95 0.95
0.15
1.9
Each lead has same dimensions
4.0
2.0
zPackaging specifications
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ Denotes hFE
2SB852K
SMT3
B
U∗
T146
3000
2SA830S
SPT
B
−
TP
5000
(1)Emitter
(2)Collector
(3)Base
0.45
2.5
5.0
(1) (2) (3)
0.5 0.45
Taping specifications
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SB852K
2SA830S
Junction temperature
Storage temperature
∗ RBE=0Ω
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
−40
−32
−6
−0.3
0.2
0.3
150
−55 to +150
Unit
V
V∗
V
A
W
°C
°C
Rev.A
1/3
Share Link: 