4. ELECTRO-OPTICAL CHARACTERISTICS (at IF = 20mA, Ta = 25ºC)
Item
Value
Symbol
Unit
Min. Typ. Max.
Luminous Intensity 1
IV
700 1300 2000
mcd
Dominant Wavelength
λd
519
527 536
nm
Forward Voltage
VF
-
3.6
4.0
V
View Angle
2θ ½
Reverse Current (at VR = 5V)
IR
70/40
deg.
-
-
5
µA
Note : 1. Luminous Intensity Tolerance ± 10%
<060712> Rev. 0.1
LT770D
SEOUL SEMICONDUCTOR CO., LTD.
148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea
TEL : 82-2-3281-6269 FAX : 82-2-857-5430
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