HV400MJ883 View Datasheet(PDF) - Harris Semiconductor

Part Name

Description

MFG CO.

HV400MJ883

High Current MOSFET Driver

Harris Semiconductor 

HV400MJ/883

Die Characteristics

DIE DIMENSIONS:

1700 x 1820 x 483µm

METALLIZATION:

Type: 1% Cu, 99% Al

Thickness: 16kÅ ± 2kÅ

SUBSTRATE POTENTIAL (POWERED UP):

Unbiased

WORST CASE CURRENT DENSITY:

8.2 x 104 A/cm2 during 1µs pulse with -35A output current,

through 8µm wide line 14kA thick.

GLASSIVATION:

Type: Silox

Thickness: 12kÅ ± 2kÅ

Type: Nitride

Thickness: 3.5kÅ ± 2.5kÅ

TRANSISTOR COUNT:

3

PROCESS:

HFSB Linear Dielectric Isolation

Metallization Mask Layout

HV400MJ/883

V+ (1)

INPUT (2)

SINK OUTPUT (3)

GROUND (4)

(7) DIODES

(6) SINK OUTPUT

(5) GROUND

10

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