AUIRFZ44NS View Datasheet(PDF) - International Rectifier

Part Name

Description

MFG CO.

AUIRFZ44NS

HEXFET® Power MOSFET

International Rectifier 

AUIRFZ44NS/L

Peak Diode Recovery dv/dt Test Circuit

D.U.T*

+

‚

-

+

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

ƒ

• Low Leakage Inductance

Current Transformer

-

„

-

+



RG

VGS

• dv/dt controlled by RG

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

+

- VDD

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

V[GS=10V] ***

D.U.T. ISD Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. VDS Waveform Diode Recovery

dv/dt

Re-Applied

Voltage

Body Diode

Inductor Curent

Forward Drop

Ripple ≤ 5%

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[VDD]

[ISD]

Fig 14. For N-channel HEXFET® power MOSFETs

8

www.irf.com

Share Link: