IRF9640L View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
MFG CO.
IRF9640L Datasheet PDF : 10 Pages
| |||
www.vishay.com
IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
-200
VGS = -10 V
44
7.1
27
Single
0.50
S
I2PAK (TO-262)
D2PAK (TO-263)
G
DS
G
D
S
G
D
P-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
Available
• P-channel
• Fast switching
Available
• Ease of paralleling
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application. The through-hole version (IRF9640L,
SiHF9640L) is available for low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF9640S-GE3
Lead (Pb)-free
IRF9640SPbF
SiHF9640S-E3
D2PAK (TO-263)
-
IRF9640STRLPbF a
SiHF9640STL-E3 a
D2PAK (TO-263)
-
IRF9640STRRPbF a
SiHF9640STR-E3 a
I2PAK (TO-262)
SiHF9640L-GE3
IRF9640LPbF
SiHF9640L-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
Linear Derating Factor (PCB mount) e
Single Pulse Avalanche Energy b
Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount) e
Peak Diode Recovery dV/d c
VDS
VGS
VGS at -10 V
TC = 25 °C
TC = 100 °C
ID
IDM
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.
c.
d.
I1VS.DD6Dm=-m1-51f0rAoV,m,dsIc/tadasrttein. g15T0J
= 25 °C, L = 8.7
A/μs, VDD VDS,
mH,
TJ
R15g0=°2C5.
,
IAS
=
-11
A
(see
fig.
12).
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
-200
± 20
-11
-6.8
-44
1.0
0.025
700
-11
13
125
3.0
-5.0
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S16-0754-Rev. E, 02-May-16
1
Document Number: 91087
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 