NPN MMBT3904WT1 PNP MMBT3906WT1
MMBT3906WT1
STATIC CHARACTERISTICS
2.0
TJ = +125°C
1.0
+25°C
VCE = 1.0 V
0.7
– 55°C
0.5
0.3
MMBT3906WT1
0.2
0.1
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20 30
50 70 100
200
Figure 31. DC Current Gain
1.0
0.8
IC = 1.0 mA
0.6
MMBT3906WT1
10 mA
30 mA
0.4
0.2
0
0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
Figure 32. Collector Saturation Region
TJ = 25°C
100 mA
2.0 3.0
5.0 7.0 10
1.0
TJ = 25°C
0.8
0.6
MMBT3906WT1
0.4
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.2
VCE(sat) @ IC/IB = 10
0
1.0 2.0 5.0 10
20
50
100 200
IC, COLLECTOR CURRENT (mA)
Figure 33. “ON” Voltages
1.0
0.5
qVC FOR VCE(sat)
0
+25°C TO +125°C
– 55°C TO +25°C
–0.5
MMBT3906WT1
–1.0 qVS FOR VBE(sat)
–1.5
+25°C TO +125°C
– 55°C TO +25°C
–2.0
0
20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA)
Figure 34. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
9