BM29F400B View Datasheet(PDF) - Unspecified

Part Name

Description

MFG CO.

BM29F400B

4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY

Unspecified 

BRIGHT

Microelectronics

Inc.

Preliminary BM29F400T/BM29F400B

AC CHARACTERISTICS

Programming/Erase Operations

PARAMETER

SYM.

JEDEC

tAVAV

tAVEL

tELAX

tDVEH

tEHDX

Standard

tWC

tAS

tAH

tDS

tDH

tOES

tOEH

tGHWL

tWLEL

tEHWH

tELEH

tEHEL

tWHWH1

tGHWL

tWS

tWH

tCP

tCPH

tWHWH1

DESCRIPTION

Write Cycle Time(1)

Address Setup Time

Address Hold Time

Data Setup Time

Data Hold Time

Output Enable Setup Time(1)

Output Enable

Read(1)

Hold Time

Toggle and Data Polling(1)

Read Recover Time Before Write

WE Setup Time

WE Hold Time

CE Pulse Width

CE Pulse Width High

Byte Programming Operation

tWHWH2

tWHWH2 Sector Erase Operation(2)

tWHWH3

tWHWH3 Chip Erase Operation(2)

tVCS

tVIDR

tVLHT

tWPP1

tWPP2

tOESP

Vcc Setup Time(1,3)

Rise Time to VID(1,3)

Voltage Transition Time(1,3)

Sector Protect Write Pulse Width(4)

Sector Unprotect Write Pulse Width(4)

OE Setup Time to WE Active(1, 3)

tCSP

OE Setup Time to WE Active(1, 4)

Notes:

1. Not 100% tested.

2. Does not include pre-programming time.

3. This timing is for Sector Unprotect operation.

4. Output Driver Disable Time.

-90 -120 -150 Unit

Min. 90 120 150 nS

Min. 0

0

0

nS

Min. 45 50 50 nS

Min. 45 50 50 nS

Min. 0

0

0

nS

Min. 0

0

0

nS

Min. 0

0

0

nS

Min. 10 10 10 nS

Min. 0

0

0

nS

Min. 0

0

0

nS

Min. 0

0

0

nS

Min. 45 50 50 nS

Min. 20 20 20 nS

Typ. 16 16 16 mS

Max. 400 400 400 mS

Typ. 0.26 0.26 0.26 sec

Max. 12 12 12 sec

Typ. 2.0 2.0 2.0 sec

Max. 90 90 90 sec

Min. 50 50 50 mS

Min. 500 500 500 nS

Min. 4

4

4 mS

Min. 100 100 100 mS

Min. 10 10 10 mS

Min. 4

4

4 mS

Min. 4

4

4

nS

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