IS62VV25616LL-10M View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

MFG CO.

IS62VV25616LL-10M

256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62VV25616L/LL

ISSI ®

WRITE CYCLE NO. 4 (UB/LB Controlled)

t WC

ADDRESS

ADDRESS 1

t WC

ADDRESS 2

OE

t SA

CE LOW

WE

UB, LB

DOUT

DIN

t PBW

t HZWE

DATA UNDEFINED

WORD 1

HIGH-Z

t SD

DATAIN

VALID

t HA

t SA

t PBW

WORD 2

t HA

t LZWE

t HD

t SD

DATAIN

VALID

t HD

UB_CSWR4.eps

DATA RETENTION SWITCHING CHARACTERISTICS (L/LL)

Symbol

VDR

IDR

tSDR

tRDR

Parameter

Vcc for Data Retention

Data Retention Current

Test Condition

See Data Retention Waveform

Vcc = 1.0V, CE ≥ Vcc – 0.2V

Data Retention Setup Time See Data Retention Waveform

Recovery Time

See Data Retention Waveform

Min. Max. Unit

1.0 2.2

V

— 15

µA

—5

0—

ns

tRC —

ns

(For -L version)

(For -LL version)

DATA RETENTION WAVEFORM (CE Controlled)

VCC

1.65V

tSDR

Data Retention Mode

tRDR

1.4V

VDR

CE

GND

CE ≥ VCC - 0.2V

Integrated Silicon Solution, Inc. — 1-800-379-4774

9

PRELIMINARY INFORMATION Rev. 00C

11/30/00

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