ARF461A View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
MFG CO.
ARF461A Datasheet PDF : 4 Pages
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RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
ARF461A(G)
TO-247
ARF461B(G)
Common
Source
250V 150W 65MHz
The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
optimized for both linear and high efficiency classes of operation.
• Specified 250 Volt, 40.68 MHz Characteristics:
•
Output Power = 150 Watts.
•
Gain = 13dB (Class AB)
•
Efficiency = 75% (Class C)
• Low Cost Common Source RF Package.
• Low Vth thermal coefficient.
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
• RoHS Compliant
MAXIMUM RATINGS
Symbol
VDSS
VDGO
ID
VGS
PD
RθJC
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063” from Case for 10 Sec.
All Ratings: TC = 25°C unless otherwise specified.
ARF461AG/BG
1000
1000
6.5
±30
250
0.50
-55 to 150
300
Unit
V
A
V
W
°C/W
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
VDS(ON)
IDSS
IGSS
gfs
VGS(TH)
Parameter
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA)
On State Drain Voltage 1 (ID(ON) = 3.25A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8VDSS, VGS = 0, TC = 125°C)
Gate-Source Leakage Current (VDS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 3.25A)
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
Min
Typ
Max Unit
1000
V
6.5
25
μA
250
±100
nA
3
4
mhos
3
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
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