MJ15025 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

MJ15025

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

MJ15023 MJ15025

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-emitter

sustaining voltage

MJ15023

MJ15025

IC=-0.1A ;IB=0

VCEsat-1 Collector-emitter saturation voltage IC=-8A; IB=-0.8A

VCEsat-2 Collector-emitter saturation voltage IC=-16A; IB=-3.2A

VBE

Base-emitter on voltage

IC=-8A ; VCE=-4V

ICEO

Collector

cut-off current

MJ15023 VCE=-150V; IB=0

MJ15025 VCE=-200V; IB=0

ICEX

Collector

cut-off current

MJ15023 VCE=-200V; VBE(off)=-1.5V

MJ15025 VCE=-250V; VBE(off)=-1.5V

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-8A ; VCE=-4V

hFE-2

Is/b

COB

DC current gain

Second breakdown collector

current with base forward biased

Output capacitance

IC=-16A ; VCE=-4V

VCE=-50Vdc,t=0.5 s,

VCE=-80Vdc,t=0.5 s,Nonrepetitive

IE=0 ; VCB=-10V;f=1.0MHz

fT

Transition frequency

IC=-1A ; VCE=-10V;f=1.0MHz

MIN TYP. MAX UNIT

-200

V

-250

-1.4

V

-4.0

V

-2.2

V

-0.5 mA

-0.25 mA

-0.5 mA

15

60

5

-5.0

-2.0

A

600 pF

4

MHz

2

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