TISP61511DR View Datasheet(PDF) - Bourns, Inc
Part Name
Description
MFG CO.
TISP61511DR Datasheet PDF : 9 Pages
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TISP61511D Gated Protectors
Absolute Maximum Ratings
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, VGK = 0, -40 °C ≤ TJ ≤ 85 °C
Repetitive peak gate-cathode voltage, VKA = 0, -40 °C ≤ TJ ≤ 85 °C
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
VDRM
VGKRM
-100
V
-85
V
10/1000 µs
5/310 µs
0.2/310 µs
1/20 µs
2/10 µs
Non-repetitive peak on-state curr ent, 50 Hz (see Notes 1 and 2)
ITSP
TJ = -40 °C
TJ = 25 °C, 85 °C
30
40
40
A
90
120
170
full-sine-wave, 20 ms
1s
ITSM
5
A
3.5
Non-repetitive peak gate current, half-sine-wave, 10 ms (see Notes 1 and 2)
IGSM
2
A
Junction temperatur e
TJ
-55 to +150
°C
Storage temperature range
Tstg
-55 to +150
°C
NOTES: 1. Initially the protector must be in thermal equilibrium with -40 °C ≤ TJ ≤ 85 °C. The surge may be repeated after the device returns
to its initial conditions. See the applications section for the details of the impulse generators.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice
the rated current value of an individual terminal pair). Above 85 °C, derate linearly to zero at 150 °C lead temperature.
Recommended Operating Conditions
CG Gate decoupling capacitor
Component
Min Typ Max Unit
220
nF
Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Min Typ Max Unit
ID Off-state current
V(BO) Breakover voltage
Gate-cathode voltage
VGK(BO) at breakover
VT On-state voltage
VF Forward voltage
Peak forward recovery
VFRM voltage
VD = -85 V, VGK = 0
TJ = 25 °C
TJ = 70 °C
IT = 30 A, 10/1000 µs, 1 kV, RS = 33 Ω, di/dt(i) = 8 A/µs (see Note 3)
IT = 30 A, 10/700 µs, 1.5 kV, RS= 10 Ω, di/ dt(i) = 14 A/µs (see Note 3)
IT = 30 A, 1.2/50 µs, 1.5 kV, RS= 10 Ω, di/dt (i) = 70 A/µs (see Note 3)
IT = 38 A, 2/10 µs, 2.5 kV, RS= 61 Ω, di/ dt(i) = 40 A/µs (see Note 3)
IT = 0.5 A, tw = 500 µs
IT = 3 A, tw = 500 µs
IF = 5 A, tw = 500 µs
IF = 30 A, 10/1000 µs, 1 kV, RS = 33 Ω, di/ dt(i) = 8 A/µs (see Note 3)
IT = 30 A, 10/700 µs, 1.5 kV, RS= 10 Ω, di/dt (i) = 14 A/µs (see Note 3)
IT = 30 A, 1.2/50 µs, 1.5 kV, RS= 10 Ω, di/dt (i) = 70 A/µs (see Note 3)
IT = 38 A, 2/10 µs, 2.5 kV, RS= 61 Ω, di/ dt(i) = 40 A/µs (see Note 3)
5
µA
50
µA
-58
V
10
20
V
25
3
V
4
3
V
5
5
V
7
12
NOTE
3: All tests have CG = 220 nF and VGG = -48 V. RS is the current limiting resistor between the output of the impulse generator and
the R or T terminal. See the applications section for the details of the impulse generators.
JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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