TCA 3727
Characteristics (cont’d)
VS = 40 V; VL = 5 V; – 25 °C ≤ Tj ≤ 125 °C
Parameter
Symbol
Limit Values
min. typ. max.
Unit Test Condition
Standby Cutout (inhibit)
Threshold
Threshold
Hysteresis
VInh
2
(L→H)
3
4
V–
VInh
1.7 2.3 2.9 V –
(H→L)
VInhhy
0.3 0.7 1.1 V –
Internal Z-Diode
Z-voltage
VLZ
6.5 7.4 8.2 V IL = 50 mA
Power Outputs
Diode Transistor Sink Pair
(D13, T13; D14, T14; D23, T23; D24, T24)
Saturation voltage
Saturation voltage
Reverse current
Forward voltage
Forward voltage
Vsatl
–
0.3 0.6 V IQ = – 0.5 A
Vsatl
–
0.5 1
V IQ = – 0.75 A
IRl
–
–
300 µA VQ = 40 V
VFl
–
0.9 1.3 V IQ = 0.5 A
VFl
–
1
1.4 V IQ = 0.75 A
Diode Transistor Source Pair
(D11, T11; D12, T12; D21, T21; D22, T22)
Saturation voltage
VsatuC
–
Saturation voltage
VsatuD
–
Saturation voltage
VsatuC
–
Saturation voltage
VsatuD
–
Reverse current
IRu
–
Forward voltage
VFu
–
Forward voltage
VFu
–
Diode leakage current
ISL
–
0.9 1.2 V IQ = 0.5 A;
charge
0.3 0.7 V IQ = 0.5 A;
discharge
1.1 1.4 V IQ = 0.75 A;
charge
0.5 1
V IQ = 0.75 A;
discharge
–
300 µA VQ = 0 V
1
1.3 V IQ = – 0.5 A
1.1 1.4 V IQ = – 0.75 A
1
2
mA IF = – 0.75 A
Semiconductor Group
11
1998-02-01