T4312816A View Datasheet(PDF) - Taiwan Memory Technology

Part Name

Description

MFG CO.

T4312816A

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

Preliminary T4312816A

Read & Write Cycle at Different Bank @ Burst Length = 4

0

1

2

3

4

5

6

7

8

9

10 11 12 13 14 15 16 17 18 19

CLOCK

CKE

H IG H

CS

RAS

CAS

ADDR

RAa

CAa

RBb

CBb RAc

CAc

BA

A 10 /A P

RAa

CL=2

DQ

CL=3

RBb

Q A a0 Q A a1 Q A a2 Q A a3

Q A a0 Q A a1 Q A a2 Q A a3

RAc

tCD L

*N ote1

DBb0 DBb1 DBb2 DBb3

Q A c0 Q A c1 Q A c2

DBb0 DBb1 DBb2 DBb3

Q A c0 Q A c1

WE

DQM

R ow A ctive

(A -B ank)

R ead (A -

B ank)

R ow A ctive

(B -B ank)

P rech arg e

(A -B ank)

W rite (B -

B ank)

R ow A ctive

(A -B ank)

R ead (A -

B ank)

:D o n 't c a re

*Note : 1. tCDL should be met to complete write.

TM Technology Inc. reserves the right

P.20

to change products or specifications without notice.

Publication Date: APR. 2003

Revision: 0.B

Share Link: