SDB10S30(2001) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

MFG CO.

SDB10S30
(Rev.:2001)

Silicon Carbide Schottky Diode

Infineon Technologies 

Thermal Characteristics

Parameter

Preliminary data

Symbol

Characteristics

Thermal resistance, junction - case

SMD version, device on PCB:

P-TO263-3-2: @ min. footprint

P-TO263-3-2: @ 6 cm2 cooling area 1)

RthJC

RthJA

SDP10S30, SDB10S30

SDT10S30

Values

Unit

min. typ. max.

-

-

2.3 K/W

-

-

62

-

35

-

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

Static Characteristics

Diode forward voltage

IF=10A, Tj=25°C

IF=10A, Tj=150°C

VF

-

1.5 1.7

-

1.5 1.9

Reverse current

VR=300V, Tj=25°C

VR=300V, Tj=150°C

IR

-

15 200

-

20 1000

Unit

V

µA

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

2001-12-04

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