PUMD2(2008) View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

MFG CO.

PUMD2
(Rev.:2008)

NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ

NXP Semiconductors. 

NXP Semiconductors

PEMD2; PIMD2; PUMD2

NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ

103

hFE

(1)

(2)

(3)

102

10

006aaa038

10−1

VCEsat

(V)

006aaa039

(1)

(2)

(3)

1

10−1

1

10

102

IC (mA)

VCE = 5 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

Fig 1. TR1 (NPN): DC current gain as a function of

collector current; typical values

006aaa040

10

10−2

1

10

102

IC (mA)

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

Fig 2.

TR1 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

006aaa041

10

VI(on)

(V)

(1)

(2)

1

(3)

VI(off)

(V)

(1)

1

(2)

(3)

10−1

10−1

1

10

102

IC (mA)

VCE = 0.3 V

(1) Tamb = −40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig 3. TR1 (NPN): On-state input voltage as a

function of collector current; typical values

10−1

10−2

10−1

1

101

IC (mA)

VCE = 5 V

(1) Tamb = −40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig 4. TR1 (NPN): Off-state input voltage as a

function of collector current; typical values

PEMD2_PIMD2_PUMD2_7

Product data sheet

Rev. 07 — 24 September 2008

© NXP B.V. 2008. All rights reserved.

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