NGTB25N120LWG View Datasheet(PDF) - ON Semiconductor
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NGTB25N120LWG Datasheet PDF : 9 Pages
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NGTB25N120LWG
TYPICAL CHARACTERISTICS
16
5
14
200 V
4.5
VCE = 600 V
VGE = 15 V
Eon
400 V
600 V
4 IC = 25 A
12
3.5 Rg = 10 W
10
3
8
2.5
6
2
1.5
Eoff
4
1
2
0.5
0
0
0
50
100
150
200
250
0 20 40 60 80 100 120 140 160
QG, GATE CHARGE (nC)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Charge
Figure 8. Energy Loss vs. Temperature
1000
100
td(off)
tr
tf
td(on)
10 VCE = 600 V
VGE = 15 V
IC = 25 A
Rg = 10 W
1
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Time vs. Temperature
1000
tf
td(off)
100
td(on)
tr
10
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1
8 12 16 20 24 28 32 36 40 44 48 52
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Time vs. IC
10
9 VCE = 600 V
VGE = 15 V
8 TJ = 150°C
7 Rg = 10 W
Eon
6
5
4
3
Eoff
2
1
0
8 12 16 20 24 28 32 36 40 44
IC, COLLECTOR CURRENT (A)
Figure 10. Energy Loss vs. IC
48 52
10
9
VCE = 600 V
VGE = 15 V
8 IC = 25 A
7 TJ = 150°C
Eon
6
5
4
3
Eoff
2
1
0 5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 12. Energy Loss vs. Rg
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