NDP08N60ZG View Datasheet(PDF) - ON Semiconductor

Part Name

Description

MFG CO.

NDP08N60ZG

N-Channel Power MOSFET 600 V, 0.95 Ω

ON Semiconductor 

NDF08N60Z, NDP08N60Z

TYPICAL CHARACTERISTICS

100

10 TJ = 150°C

1

TJ = 125°C

0.1

0 50 100 150 200 250 300 350 400 450 500 550 600

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Drain−to−Source Leakage Current

versus Voltage

2750

2500

2250

2000

1750

1500

1250

1000

750

500

250

0

0.01

Coss

Crss

Ciss

TJ = 25°C

VGS = 0 V

f = 1 MHz

0.1

1

10

100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 8. Capacitance Variation

15

350

14

13

QT

300

12

11

VDS

250

10

9

8

7 QGS

6

QGD

VGS

200

150

5

4

3

100

VDS = 300 V

2

ID = 7.5 A 50

1

TJ = 25°C

0

0

0 4 8 12 16 20 24 28 32 36 40

Qg, TOTAL GATE CHARGE (nC)

Figure 9. Gate−to−Source Voltage and

Drain−to−Source Voltage versus Total Charge

1000

VDD = 300 V

ID = 7.5 A

VGS = 10 V

100

10

10.0

td(off)

tr

tf

td(on)

TJ = 150°C

1.0

25°C

125°C

−55°C

1

1

10

100

RG, GATE RESISTANCE (W)

Figure 10. Resistive Switching Time Variation

versus Gate Resistance

0.1

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 11. Diode Forward Voltage versus

Current

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