MURS120HE3/52T View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
MFG CO.
MURS120HE3/52T Datasheet PDF : 4 Pages
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MURS120
Vishay General Semiconductor
100
10
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 25 °C
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
100
10
TJ = 175 °C
1
0.1
0.01
TJ = 100 °C
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18) MIN.
0.085 (2.159) MAX.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.220 REF.
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number: 88687 For technical questions within your region, please contact one of the following:
Revision: 27-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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