MUR1100E(2002) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
MFG CO.
MUR1100E Datasheet PDF : 8 Pages
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MUR180E, MUR1100E
ELECTRICAL CHARACTERISTICS
20
10
7.0
5.0
3.0
TJ = 175°C
25°C
2.0
100°C
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
1000
TJ = 175°C
100
10
100°C
1.0
25°C
0.1
0.01
0
100 200 300 400 500 600 700 800 900 1000
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if VR is sufficiently below rated VR.
5.0
4.0
RATED VR
RqJA = 50°C/W
3.0
0.03
0.02
0.01
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
5.0
4.0
(CAPACITIVEĂLOAD)
IPK
IAV
+
20
3.0
TJ = 175°C
2.0
10
5.0
dc
SQUARE WAVE
2.0
dc
SQUARE WAVE
1.0
0
0
50
100
150
200
250
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Current Derating
(Mounting Method #3 Per Note 1)
20
TJ = 25°C
10
7.0
5.0
1.0
0
0
0.5
1.0
1.5
2.0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Power Dissipation
3.0
2.0
2.5
0
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
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