MMST5551 View Datasheet(PDF) - Rectron Semiconductor
Part Name
Description
MFG CO.
MMST5551 Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
Chatacteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 1.0mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= 100µAdc, IE= 0)
Emitter-Base Breakdown Voltage (IE= 10µAdc, IC= 0)
Collector Cutoff Current (VCB= 120Vdc, IE= 0)
Emitter Cutoff Current (VEB= 3Vdc, IC= 0)
ON CHARACTERISTICS
DC Current Gain (IC= 1mAdc, VCE= 5Vdc)
(IC= -10mAdc, VCE= 5Vdc)
(IC= 50mAdc, VCE= 5Vdc)
Collector-Emitter Saturation Voltage (IC= 10mAdc, IB= 1mAdc)
(IC= 50mAdc, IB= 5mAdc)
Base-Emitter Saturation Voltage (IC= 10mAdc, IB= 1mAdc)
(IC= 50mAdc, IB= 5mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (IC= 10mAdc, VCE= 10Vdc, f= 100MHz)
Output Capacitance (VCB= 10Vdc, IE= 0, f= 1.0MHz)
Noise figure (IC= 0.2mAdc, VCE= 5Vdc, f= 1.0kHz,Rg=10Ω)
Symbol
Min
V(BR)CEO
160
V(BR)CBO
180
V(BR)EBO
5
ICBO
-
IEBO
-
80
hFE
80
30
-
VCE(sat)
-
-
VBE(sat)
-
fT
100
Cob
-
NF
-
Max
-
-
-
50
50
-
250
-
0.15
0.2
1
1
300
6
8
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
-
Vdc
Vdc
MHz
pF
dB
RECTRON
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