MMBT4401W View Datasheet(PDF) - Secos Corporation.
Part Name
Description
MFG CO.
MMBT4401W Datasheet PDF : 5 Pages
| |||
MMBT4401W
Elektronische Bauelemente
NPN Silicon
Switching Transistor
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
10
10
IC = 1.0 mA, RS = 150 Ω
8.0
IC = 500 µA, RS = 200 Ω
IC = 100 µA, RS = 2.0 kΩ
RS = OPTIMUM
RS = SOURCE
IC = 50 µA, RS = 4.0 kΩ
RS = RESISTANCE
6.0
f = 1.0 kHz
8.0
IC = 50 µA
IC = 100 µA
6.0
IC = 500 µA
IC = 1.0 mA
4.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
f, Frequency (kHz)
RS, Source Resistance (OHMS)
Figure 9. Frequency Effects
Figure 10. Source Resistance Effects
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
selected from the MMBT4401W lines, and the same units
hfe and other “h” parameters for this series of transistors. To
obtain these curves, a high–gain and a low–gain unit were
were used to develop the correspondingly numbered curves
on each graph.
300
50 k
MMBT4401W UNIT 1
200
20 k
MMBT4401W UNIT 2
10 k
100
70
MMBT4401W UNIT 1
5.0 k
MMBT4401W UNIT 2
50
2.0 k
30
1.0 k
20
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, Collector Current (mA)
Figure 11. Current Gain
500
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, Collector Current (mA)
Figure 12. Input Impedance
5.0 7.0 10
10
7.0
5.0
MMBT4401W UNIT 1
3.0
MMBT4401W UNIT 2
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, Collector Current (mA)
Figure 13. Voltage Feedback Ratio
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
100
50
20
10
5.0
2.0
1.0
0.1
MMBT4401W UNIT 1
MMBT4401W UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, Collector Current (mA)
Figure 14. Output Admittance
Any changing of specification will not be informed individual
Page 4 of 5
Share Link: 