MMBT3904WT1 View Datasheet(PDF) - Willas Electronic Corp.
Part Name
Description
MFG CO.
MMBT3904WT1 Datasheet PDF : 11 Pages
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General Purpose Transistors
NPN
MMBT3904WT1
PNP
MMBT3906WT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2)
(I C = 1.0 mAdc, I B = 0)
(I C = –1.0 mAdc, I B = 0)
MMBT3904WT1
MMBT3906WT1
V(BR)CEO
Collector–Base Breakdown Voltage
(I C = 10 µAdc, I E = 0)
(I C = –10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
MMBT3904WT1
MMBT3906WT1
V(BR)CBO
Min
Max
40
—
– 40
—
60
—
– 40
—
(IE= 10 µAdc, I C = 0)
MMBT3904WT1
V(BR)EBO
6.0
—
(I E = –10 µAdc, I C = 0)
Base Cutoff Current
MMBT3906WT1
– 5.0
—
(V CE = 30 Vdc, V EB = 3.0 Vdc)
MMBT3904WT1
I BL
—
50
(V CE = –30 Vdc, V EB = –3.0 Vdc)
MMBT3906WT1
—
-50
Collector Cutoff Current
(V CE = 30 Vdc, V EB = 3.0 Vdc)
MMBT3904WT1
I CEX
—
50
(V CE = –30 Vdc, V EB = –3.0 Vdc)
MMBT3906WT1
—
– 50
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
2012-11
WILLAS ELECTRONIC CORP.
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