MMBT2369A View Datasheet(PDF) - Diotec Semiconductor Germany

Part Name

Description

MFG CO.

MMBT2369A

Surface Mount Si-Epi-Planar Switching Transistors

Diotec Semiconductor Germany  

MMBT2369 / MMBT2369A

MMBT2369 / MMBT2369A

NPN

Surface Mount Si-Epi-Planar Switching Transistors

Si-Epi-Planar Schalttransistoren für die Oberflächenmontage

Version 2006-06-02

2.9 ±0.1

1.1

0.4

3

Type

Code

1

2

1.9

Dimensions - Maße [mm]

1=B 2=E 3=C

Power dissipation – Verlustleistung

Plastic case

Kunststoffgehäuse

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped in ammo pack

Standard Lieferform gegurtet in Ammo-Pack

NPN

250 mW

SOT-23

(TO-236)

0.01 g

Maximum ratings (TA = 25°C)

Collector-Emitter-volt. – Kollektor-Emitter-Spannung E-B short VCES

Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open

VCEO

Collector-Base-voltage – Kollektor-Basis-Spannung E open

VCBO

Emitter-Base-voltage – Emitter-Basis-Spannung

C open

VEBO

Power dissipation – Verlustleistung

Ptot

Collector current – Kollektorstrom (dc)

IC

Junction temperature – Sperrschichttemperatur

Tj

Storage temperature – Lagerungstemperatur

TS

Grenzwerte (TA = 25°C)

MMBT2369 MMBT2369A

40 V

15 V

15 V

15 V

40 V

40 V

4.5 V

250 mW 1)

200 mA

-55...+150°C

-55…+150°C

Characteristics (Tj = 25°C)

DC current gain – Kollektor-Basis-Stromverhältnis 2)

IC = 10 mA, VCE = 1 V

IC = 100 mA, VCE = 2 V

MMBT2369

hFE

hFE

IC = 10 mA, VCE = 1 V

IC = 10 mA, VCE = 0.35 V

IC = 10 mA, VCE = 0.35 V, Tj = -55°C

IC = 30 mA, VCE = 0.4 V

IC = 100 mA, VCE = 1 V

hFE

hFE

MMBT2369A hFE

hFE

hFE

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)

IC = 10 mA, IB = 1 mA

MMBT2369 VCEsat

IC = 10 mA, IB = 1 mA

IC = 10 mA, IB = 1 mA, Tj = 125°C

IC = 30 mA, IB = 3 mA

IC = 100 mA, IB = 10 mA

MMBT2369A

VCEsat

VCEsat

VCEsat

VCEsat

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

40

–

120

20

–

–

–

–

120

40

–

–

20

–

–

30

–

–

20

–

–

–

–

0.25 V

–

–

0.20 V

–

–

0.30 V

–

–

0.25 V

–

–

0.50 V

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

© Diotec Semiconductor AG

http://www.diotec.com/

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