MJ450 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

MJ450

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

MJ450

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-200mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC=-10A; IB=-1A

VBE(sat) Base-Emitter Saturation Voltage

IC=-10A; IB=-1A

ICBO

Collector Cutoff Current

VCE=-40V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE

DC Current Gain

IC=-10A ; VCE=-2V

fT

Current Gain-Bandwidth Product

IC= -1A ;VCE=-10V; ftest=1MHz

MIN TYP. MAX UNIT

-40

V

-1

V

-1.5 V

-1 mA

-10 mA

20

2

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