
Dec./2006
TYPICAL CHARACTERISTICS (Ta=25°C)
80
ID vs. VDS
Ta=25℃
70 VGS=-0.2V/STEP
60
VGS=0V
50
40
30
20
10
0
0
1
2
3
4
5
DRAIN TO SOURCE VOLTAGE VDS(V)
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF1451A
Low Noise MES FET
80
ID VS. VDS
70 Ta=25℃
VDS=3V
60
50
40
30
20
10
0
-2.0
-1.0
0.0
GATE TO SOURCE VOLTAGE VGS(V)
Pout,Glp vs. Pin
25
Pout
Glp
20
30
f=12GHz
VDS=3V
IDS=30mA
25
15
20
10
15
5
10
0
-10.0
-5.0 0.0
5.0
Pin(dBm)
5
10.0
MITSUBISHI
(2/4)
Decl/2006