MBRD1035CTLT4G(2004) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
MFG CO.
MBRD1035CTLT4G Datasheet PDF : 6 Pages
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MBRD1035CTL
SWITCHMODEt
Schottky Power Rectifier
DPAK Power Surface Mount Package
The MBRD1035CTL employs the Schottky Barrier principle in a
large area metal−to−silicon power diode. State of the art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency
switching power supplies, free wheeling diode and polarity protection
diodes.
Features
• Pb−Free Package is Available
• Highly Stable Oxide Passivated Junction
• Guardring for Stress Protection
• Matched Dual Die Construction −
May be Paralleled for High Current Output
• High dv/dt Capability
• Short Heat Sink Tap Manufactured − Not Sheared
• Very Low Forward Voltage Drop
• Epoxy Meets UL 94 V−O @ 0.125 in
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in 75 Units Per Plastic Tube
• Available in 16 mm Tape and Reel, 2500 Units Per Reel,
Add “T4’’ to Suffix Part #
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES
35 VOLTS
1
4
3
12
3
4
DPAK
CASE 369C
MARKING
DIAGRAM
YWW
B1035CL
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
MBRD1035CTL
DPAK
75 Units/Rail
MBRD1035CTLT4 DPAK 2500/Tape & Reel
MBRD1035CTLT4G DPAK 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
August, 2004 − Rev. 3
Publication Order Number:
MBRD1035CTL/D
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