M6MGB162S2BVP View Datasheet(PDF) - Mitsumi

Part Name

Description

MFG CO.

M6MGB162S2BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

Mitsumi 

POWER DOWN CHARACTERISTICS

MITSUBISHI LSIs

M6MGB/T162S2BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS

3.3V-ONLY FLASH MEMORY &

2,097,152-BIT (262,144-WORD BY 8-BIT) CMOS SRAM

Stacked-MCP (Multi Chip Package)

(1) ELECTRICAL CHARACTERISTICS

Symbol

Parameter

S-Vcc (PD) Power down supply voltage

VI (S-CE) Chip select input S-CE

Test conditions

Icc (PD)

Power down

supply current

S-Vcc=3.0V

S-CE = 0.2V

-W

other inputs=0~3V

Min

2.0

+70 ~ +85 C -

+40 ~ +70 C -

+25 ~ +40 C -

-20 ~ +25 C -

Limits

Typ Max

0.2

-

24

-

8

1

3

0.3 1

Units

V

V

mA

mA

mA

mA

Typical value is for Ta=25 C

(2) TIMING REQUIREMINTS

Symbol

tsu (PD)

trec (PD)

Parameter

Power down set up time

Power down recovery time

Test conditions

Limits

Min Typ Max

0

5

Units

ns

ms

(3) TIMING DIAGRAM

S-CE control mode

S-Vcc

2.7V

2.7V

S-CE

0.2V

tsu (PD)

S-CE =0.2V

trec (PD)

0.2V

29

Sep.1999 , Rev.2.0

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