2N1893 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

2N1893

SMALL SIGNAL NPN TRANSISTOR

STMicroelectronics 

2N1893

THERMAL DATA

Rthj-case Thermal Resistance Junction-Case

Rthj-amb Thermal Resistance Junction-Ambient

Max

Max

50

187.5

oC/W

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 90 V

VCB = 90 V

TC = 150 oC

IEBO

V(BR)CBO

V(BR)CER∗

V(BR)CEO∗

V(BR)EBO

VCE(sat)∗

Emitter Cut-off Current

(IC = 0)

Collector-Base

Breakdown Voltage

(IE = 0)

Collector-Emitter

Breakdown Voltage

(RBE ≤ 10 Ω)

Collector-Emitter

Breakdown Voltage

(IB = 0)

Emitter-Base

Breakdown Voltage

(IC = 0)

Collector-Emitter

Saturation Voltage

VEB = 5 V

IC = 100 µA

IC = 10 mA

IC = 10 mA

IE = 100 µA

IC = 50 mA

IC = 150 mA

IB = 5 mA

IB = 15 mA

VBE(sat)∗ Base-Emitter

Saturation Voltage

IC = 50 mA

IC = 150 mA

IB = 5 mA

IB = 15 mA

hFE∗ DC Current Gain

IC = 0.1 mA

IC = 10 mA

IC = 150 mA

IC = 10 mA

TC = -55 oC

VCE = 10 V

VCE = 10 V

VCE = 10 V

VCE = 10 V

hfe∗ Small Signal Current IC = 1 mA VCE = 5 V f = 1KHz

Gain

IC = 5 mA VCE = 10 V f = 1KHz

fT

Transition Frequency IC = 50 mA VCE = 10 V f = 20MHz

CCBO

Collector-Base

Capacitance

IE = 0 VCB = 10 V f = 1MHz

CEBO

Emitter-Base

Capacitance

IC = 0 VEB = 0.5 V

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %

f = 1MHz

Min.

120

100

80

7

20

35

40

20

30

45

50

Typ.

0.82

0.96

50

80

80

40

70

85

70

13

55

Max.

10

15

10

1.2

5

0.9

1.3

120

150

15

85

Unit

nA

µA

nA

V

V

V

V

V

V

V

V

MHz

pF

pF

2/5

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