KTC3198 View Datasheet(PDF) - Secos Corporation.
Part Name
Description
MFG CO.
KTC3198 Datasheet PDF : 3 Pages
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Elektronische Bauelemente
KTC3198
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
4.55±0.2
TO-92
3.5±0.2
Features
Collector-base voltage:
V(BR)CBO = 60V
(1.27 Typ.)
1.25±0.2
12 3
2.54±0.1
1: Emitter
2: Base
3: Collector
0.46±0.1
0.43+–00..0078
MAXIMUM RATINGS* (Tamb =25ć, unless otherwise s pec ified)
Symbol
Parameter
PCM
Power Dissipation
I CM
Collector Current
Tstg
Storage Temperature
TJ
Junction Temperature
Value
0.625
0.15
-55~+150
150
ELECTRICAL CHARACTERISTICS˄Tamb=25ć, unless otherwise specified˅
Parameter
Collector-base breakdown voltage
Symbol
V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
V(BR)EBO
ICBO
IEBO
hFE˄1˅
hFE˄2˅
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCEsat
VBEsat
fT
Test conditions
Ic = 100μA, IE = 0
Ic = 5 mA, IB=0
IE= 100 μA, IC=0
VCB= 60V, IE=0
VEB= 5V, IC=0
VCE= 6V , IC= 2 mA
VCE= 6V , IC = 150 mA
IC= 100 mA, IB= 10 mA
IC= 100 mA, IB= 10 mA
VCE=10V,IC=1mA, f=30MHz
MIN TYP
60
50
5
70
25
100
0.1
80
CLASSIFICATION OF hFE(1)
Rank
O
Y
GR
Range
70-140
120-240
200-400
Units
W
A
CO
CO
MAX
0.1
0.1
700
UNIT
V
V
V
PA
PA
0.25
V
1
V
MHz
BL
350-700
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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