J/SST270 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transconductance vs. Drain Current
100
VGS(off) = 3 V
VDS = –15 V
f = kHz
Output Conductance vs. Drain Current
100
VGS(off) = 3 V
TA = –55_C
10
25_C
TA = –55_C
10
25_C
125_C
125_C
1
–0.1
–1
–10
ID – Drain Current (mA)
On-Resistance vs. Drain Current
250
TA = 25_C
200
VGS(off) = 1.5 V
150
3V
100
5V
50
0
–1
100
–10
ID – Drain Current (mA)
Noise Voltage vs. Frequency
–100
ID = –0.1 mA
–1 mA
10
VDS = –10 V
1
10
100
1k
10 k
f – Frequency (Hz)
www.vishay.com
8-4
100 k
1
–0.1
VDS = –15 V
f = kHz
–1
–10
ID – Drain Current (mA)
On-Resistance vs. Temperature
300
ID = –1 mA
rDS changes X 0.7%/_C
240
180
VGS(off) = 1.5 V
3V
120
5V
60
0
–55 –35 –15 5 25 45 65 85 105 125
TA – Temperature (_C)
100 nA
Gate Leakage Current
10 nA
1 nA
TA = 125_C
–1 mA
ID = –10 mA
100 pA
IGSS @ 125_C
10 pA
TA = 25_C
–10 mA
1 pA
–1 mA
IGSS @ 25_C
0.1 pA
0
–10
–20
–30
–40
–50
VDG – Drain-Gate Voltage (V)
Document Number: 70258
S-04233—Rev. D, 02-Jul-01