HSM276AS View Datasheet(PDF) - Renesas Electronics

Part Name

Description

MFG CO.

HSM276AS

Silicon Schottky Barrier Diode for Balanced Mixer

Renesas Electronics 

HSM276AS

Absolute Maximum Ratings

Item

Repetitive peak reverse voltage

Reverse voltage

Average rectified current

Junction temperature

Storage temperature

Note: 1. Per one device

VRRM

VR

IO *1

Tj

Tstg

Symbol

Value

5

3

30

125

−55 to +125

(Ta = 25°C)

Unit

V

V

mA

°C

°C

Electrical Characteristics *1

Item

Symbol Min

Typ

Reverse voltage

VR

3.0

—

Reverse current

IR

—

—

Forward current

IF

35

—

Capacitance

C

—

—

Capacitance deviation ∆C

ESD-Capability *2

—

—

—

30

—

Notes: 1. Per one device

2. Failure criterion ; IR ≥ 100 µA at VR = 0.5 V

Max

—

50

—

0.90

0.10

—

(Ta = 25°C)

Unit

Test Condition

V

IR = 1 mA

µA VR = 0.5 V

mA VF = 0.5V

pF VR = 0.5 V, f = 1 MHz

pF VR = 0.5 V, f = 1 MHz

V C = 200 pF, R = 0 Ω , Both forward and

reverse direction 1 pulse.

Rev.1.00 Apr 26 page 2 of 4

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