FSEZ1016AMY(2009) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
MFG CO.
FSEZ1016AMY Datasheet PDF : 16 Pages
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Electrical Characteristics (Continued)
VDD=15V and TA=-40°C~+125°C (TA=TJ), unless otherwise specified.
Symbol
Parameter
Conditions
Min. Typ. Max. Units
Voltage-Error-Amplifier Section
VVR
Reference Voltage
2.475 2.500 2.525 V
VN
Green-Mode Starting Voltage on COMV Pin fS=fOSC-2KHz, VVS=2.3V
2.8
V
VG
Green-Mode Ending Voltage on COMV Pin fS=1KHz
0.8
V
IV-SINK Output Sink Current
VVS=3V, VCOMV=2.5V
90
μA
IV-SOURCE Output Source Current
VVS=2V, VCOMV=2.5V
90
μA
VV-HGH Output High Voltage
VVS=2.3V
4.5
V
Internal MOSFET Section
DCYMAX Maximum Duty Cycle
75
%
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V
600
V
∆BVDSS /∆TJ
Breakdown Voltage Temperature Coefficient
ID=250μA, Referenced
to 25°C
0.6
V/°C
IS
Maximum Continuous Drain-Source Diode
Forward Current
1
A
ISM
Maximum Pulsed Drain-Source Diode
Forward Current
4
A
RDS(ON) Static Drain-Source On-Resistance
ID=0.5A, VGS=10V
9.3 11.5 Ω
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V,
TC=25°C
VDS=480V, VGS=0V,
TC=100°C
1
μA
10 μA
tD-ON
tr
tD-OFF
tf
Turn-On Delay Time(3,4)
Rise Time
Turn-Off Delay Time
Fall Time
VDS=300V, ID=1.1A,
RG=25Ω
7
24
ns
21
52
ns
13
36
ns
27
64
ns
CISS
Input Capacitance
COSS
Output Capacitance
Over-Temperature-Protection Section
TOTP
Threshold Temperature for OTP
Notes:
3. Pulse Test: pulse width ≦ 300μs; duty cycle ≦ 2%.
4. Essentially independent of operating temperature.
VGS=0V, VDS=25V
fS=1MHz
130 170 pF
19 25 pF
140
°C
© 2009 Fairchild Semiconductor Corporation
FSEZ1016A Rev. 1.0.1
6
www.fairchildsemi.com
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