CM1213 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

MFG CO.

CM1213

6 and 8-Channel Low Capacitance ESD Protection Arrays

ON Semiconductor 

CM1213

Specifications (cont’d)

ELECTRICAL OPERATING CHARACTERISTICS1

SYMBOL PARAMETER

VREV

Reverse Standoff Voltage

ILEAK

Leakage Current

VSIG

Signal Clamp Voltage

Positive Clamp

Negative Clamp

CONDITIONS

IDIODE=10µA

VIN=3.3V DC

ILOAD = 10mA

VESD In-system ESD Withstand Voltage

Notes 2 & 3

a) Human Body Model, MIL-STD-883,

Method 3015

b) Contact Discharge per IEC 61000-4-2

Level 4

VCL

Clamping Voltage during ESD Discharge Notes 2 & 3

MIL-STD-883 (Method 3015), 8kV

Positive Transients

Negative Transients

C

Channel Capacitance

At 2.5V DC, f = 1MHz,

Note 3

MIN TYP

6.0

MAX

100

5.6 6.8

8.0

-1.2 -0.8

-0.4

+30

+25

+12

-8

39

47

UNITS

V

nA

V

V

kV

kV

V

V

pF

Note 1: TA=25°C unless otherwise specified. GND in this document refers to the lower supply voltage.

Note 2: ESD applied to channel pins with respect to GND, one at a time. All other channels are open. All GND pins tied to

ground.

Note 3: These parameters are guaranteed by design and characterization.

Rev. 3 | Page 7 of 17 | www.onsemi.com

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