BUL52B View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
BUL52B Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdwon voltage
IE=1mA ;IC=0
VCEsat-1 Collector-emitter saturation voltage IC=0.1A ;IB=20mA
VCEsat-2 Collector-emitter saturation voltage IC=1A; IB=0.2A
VCEsat-3 Collector-emitter saturation voltage IC=2A; IB=0.4A
VCEsat-4 Collector-emitter saturation voltage IC=3A; IB=0.6A
VBEsat-1 Base-emitter saturation voltage
IC=1A; IB=0.2A
VBEsat-2 Base-emitter saturation voltage
IC=2A ;IB=0.4A
VBEsat-3 Base-emitter saturation voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
IC=3A ;IB=0.6A
VCB=800V; IE=0
TC=125℃
VCE=400V; IB=0
VEB=9V; IC=0
TC=125℃
IC=0.1A ; VCE=5V
hFE-2
hFE-3
fT
Cob
DC current gain
DC current gain
Transition frequency
Output capacitance
IC=1A ; VCE=5V
IC=3A ; VCE=1V
TC=125℃
IC=0.2A ; VCE=4V
VCB=20V ;f=1MHz
Product Specification
BUL52B
MIN TYP. MAX UNIT
400
V
800
V
10
V
0.1
V
0.2
V
0.3
V
0.5
V
1.0
V
1.1
V
1.2
V
10
100
μA
100 μA
10
100
μA
20
15
45
10
5
20
MHz
40
pF
2
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