BUL52B View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
BUL52B Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BUL52B
DESCRIPTION
·
·With TO-220C package
·High voltage
·Fast switching
·High energy rating
APPLICATIONS
·Designed for use in electronic
ballast applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICM
Collector current-Peak
IB
Base current
Ptot
Total power dissipation
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
800
400
10
8
12
4
100
-55~150
UNIT
V
V
V
A
A
A
W
℃
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