BSS138 View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
MFG CO.
BSS138 Datasheet PDF : 4 Pages
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BSS138
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Source to Drain Voltage, VSD (V)
1.6
Drain Current vs. Gate Threshold Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Gate Threshold Voltage, VTH (V)
On-State Characteristics
0.9
VG=6V
0.8
VG=8V
VG=10V
0.7
VG=4V
0.6
0.5
0.4
0.3
VG=2V
0.2
0.1
0
0
1
2
3
4
Drain to Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
Drain-Source On-State Resistance
2.0
Characteristics
VGS=4.5V
ID=2.22A
1.5
1.0
VGS=10V
ID=2.22A
0.5
0
0
0.2
0.4
0.6
0.8
1.0
Gate to Source Voltage, VGS (V)
Drain Current vs. Drain-Source Breakdown
200
Voltage
150
100
50
0
0
20
40
60
80
100
Drain Source Breakdown Voltage, BVDSS (V)
Transfer Characteristics
0.6
0.5
0.4
125°С
25°С
0.3
0.2
0.1
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Gate to Source Voltage, VGS (V)
3 of 4
QW-R502-271.F
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