BSM150GB120DN2E3166 View Datasheet(PDF) - Siemens AG
Part Name
Description
MFG CO.
BSM150GB120DN2E3166 Datasheet PDF : 9 Pages
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BSM150GB120DN2E3166
Forward characteristics of fast recovery
reverse diode IF = f(VF)
parameter: Tj
300
A
260
Tj=125°C
Tj=25°C
IF 240
220
200
180
160
140
120
100
80
60
40
20
0
0.0 0.5 1.0 1.5 2.0
V
3.0
VF
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
Diode
10 0
K/W
ZthJC 10 -1
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -4
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
Semiconductor Group
8
Aug-02-1996
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