BF370,112 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
BF370,112 Datasheet PDF : 6 Pages
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NXP Semiconductors
NPN medium frequency transistor
Product data sheet
BF370
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−65
−
−65
MAX.
40
15
4.5
100
200
500
+150
150
+150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
emitter-base cut-off current
hFE
DC current gain
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
fT
transition frequency
CONDITIONS
VCB = 20 V; IE = 0 A
VCB = 20 V; IE = 0 A; Tj = 125 °C
VEB = 2 V; IC = 0 A
VCE = 1 V; IC = 10 mA
VCB = 10 V; IE = ie = 0 A; f = 1 MHz
VEB = 1 V; IC = ic = 0 A; f = 1 MHz
VCB = 10 V; IC = 0 A; f = 1 MHz
VCE = 10 V; f = 100 MHz
IC = 10 mA
IC = 40 mA
MIN.
−
−
−
40
−
−
−
TYP.
−
−
−
−
2.2
−
1.6
MAX. UNIT
400 nA
30
μA
100 nA
−
−
pF
4.5 pF
−
pF
500 −
−
MHz
490 −
−
MHz
2004 Nov 08
3
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