
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD433/435/437
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat
Collector-emitter
saturation voltage
BD433/435
BD437
IC=2A; IB=0.2A
BD433/435
VBE
Base-emitter on voltage
IC=2A ; VCE=1V
BD437
VCEO(SUS)
Collector-emitter
sustaining voltage
BD433
BD435
BD437
IC=0.1A; IB=0
ICES
ICES
IEBO
hFE-1
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
BD433
VCB=22V; IE=0
BD435
VCB=32V; IE=0
BD437
VCB=45V; IE=0
BD433
VCE=22V; VBE=0
BD435
VCE=32V; VBE=0
BD437
VCE=45V; VBE=0
VEB=5V; IC=0
BD433/435
BD437
IC=10mA ; VCE=5V
hFE-2
DC current gain
hFE-3
DC current gain
IC=0.5A ; VCE=1V
BD433/435
BD437
IC=2A ; VCE=1V
fT
Transition frequency
IC=250mA; VCE=1V
MIN TYP. MAX UNIT
0.5
0.2
V
0.6
1.1
V
1.2
22
32
V
45
100
µA
100
µA
1
mA
40
130
30
85
140
50
40
3
MHz
2