BC859BW View Datasheet(PDF) - KEXIN Industrial

Part Name

Description

MFG CO.

BC859BW

PNP Transistors

KEXIN Industrial 

SMD Type

Transistors

PNP Transistors

BC859W,BC860W

(KC859W,KC860W)

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

DC current gain

Noise Figure

Collector output capacitance

Emitter output capacitance

Transition frequency

Symbol

Test Conditions

BC859W

BC860W

VCBO Ic= -100 μA， IE=0

BC859W

BC860W

BC859W

BC859W

BC860W

VCEO Ic= -1 mA， IB=0

VEBO

ICBO

IE= -100μA， IC=0

VCB= -30 V , IE=0

VCB= -30 V , IE=0,TJ = 25℃

VCB= -50 V , IE=0

BC860W

IEBO

VCE(sat)

VCB= -50 V , IE=0,TJ = 25℃

VEB= -5V , IC=0

IC=-10 mA, IB=-0.5mA

IC=-100 mA, IB=-5mA

BCW859W,860W

BCW859BW,860BW

VBE(sat)

VBE

IC=-100 mA, IB=-5mA

VCE= -5V, IC= -2mA

VCE= -5V, IC= -10mA

hFE VCE= -5V, IC= -2mA

BCW859CW,860CW

BCW859W,860W

BCW859BW,860BW

BCW859CW,860CW

IC = -200 u A; VCE = -5 V;

RS = 2 kΩ;f = 10 Hz to 15.7 kHz

NF

IC=-200 u A; VCE = -5 V;

RS = 2 kΩ,f = 1 kHz; B = 200 Hz

Cob VCB= -10 V, IE=ie=0,f=1MHz

Ce VEB= -0.5V, IC=ic=0,f=1MHz

fT

VCE= -5V, IC= -10mA,f=100MHz

Min Typ Max Unit

-30

-50

-30

V

-45

-5

-100 nA

-4 uA

-15 nA

-4 uA

-100 nA

-0.3

-0.65

-1.2 V

0.6

0.75

0.82

220

800

220

475

420

800

4

dB

4

10

100

5

pF

MHz

■ CLASSIFICATION OF hFE

Type

BC859W BC859BW

Range

220-800

220-475

Marking

4D*

4B*

BC859CW

420-800

4C*

BC860W

220-800

4H*

BC860BW

220-475

4F*

BC860CW

420-800

4G*

2 www.kexin.com.cn

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